Three dimensional semiconductor device including pads

ABSTRACT

A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of the pad structure is patterned stepwise, portions of the first conductive layers exposed at the end of the pad structure are defined as a plurality of pad portions, and the plurality of pad portions have a greater thickness than unexposed portions of the plurality of first conductive layers.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to Korean patent applicationnumber 10-2013-0001656 filed on Jan. 7, 2013, in the Korean IntellectualProperty Office, the entire disclosure of which is incorporated byreference herein.

BACKGROUND

1. Technical Field

Various embodiments relate generally to a semiconductor device and amethod of manufacturing the same and, more particularly, to athree-dimensional semiconductor device and a method of manufacturing thesame.

2. Related Art

A non-volatile memory retains data stored therein even when not powered.Two-dimensional memory devices in which memory cells are fabricated in asingle layer over a silicon substrate have reached physical limits andmay no longer have increased degrees of integration. Accordingly,three-dimensional (3D) non-volatile memory devices in which memory cellsare stacked in a vertical direction over a silicon substrate have beenproposed.

A 3D non-volatile memory device includes interlayer insulating layersand word lines stacked alternately with each other and channel layerspenetrating therethrough. Memory cells are stacked along the channellayers. In order to selectively drive particular memory cells, a padportion is to be formed on each word line, and a contact plug is to becoupled to the pad portion.

It is difficult to form pad portions on word lines stacked on top of oneanother and form contact plugs so that the contact plugs are coupled tothe pad portions. In addition, a punch phenomenon may occur in which acontact plug passes through a pad portion, or the contact plug and thepad portion are not coupled to each other since a pad portion is notexposed along a bottom surface of a contact hole.

SUMMARY

Various embodiments relate to a semiconductor device capable of easilyforming a pad portion and a method of manufacturing the same.

A semiconductor device according to an embodiment of the presentinvention includes a substrate in which a cell region and a contactregion are defined, a pad structure including a plurality of firstconductive layers and a plurality of first insulating layers formedalternately with each other in the contact region of the substrate,wherein an end of the pad structure is patterned stepwise, portions ofthe first conductive layers exposed at the end of the pad structure aredefined as a plurality of pad portions, and the plurality of padportions have a greater thickness than unexposed portions of theplurality of first conductive layers.

A semiconductor device according to an embodiment of the presentinvention includes a substrate, a plurality of stacked structuresincluding a plurality of conductive layers and a plurality of insulatinglayers formed alternately with each other on the substrate, wherein eachend of the plurality of stacked structures is patterned stepwise, and atleast one slit separating the plurality of stacked structures from eachother, wherein portions of the plurality of conductive layers exposed ateach end of the plurality of stacked structures are defined as aplurality of pad portions, and the plurality of pad portions have agreater thickness than unexposed portions of the plurality of conductivelayers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view illustrating the structure of asemiconductor device according to an embodiment of the presentinvention;

FIG. 1B is a perspective view illustrating the structure of asemiconductor device according to another embodiment of the presentinvention;

FIGS. 2A to 7B are views illustrating a method of manufacturing asemiconductor device according to an embodiment of the presentinvention;

FIGS. 8A to 8B are views illustrating additional processes of the methodof manufacturing a semiconductor device according to an embodiment ofthe present invention;

FIGS. 9A to 11B are views illustrating additional processes of themethod of manufacturing a semiconductor device according to anotherembodiment of the present invention;

FIGS. 12A to 12D are perspective views illustrating a cell structure ofa semiconductor device according to an embodiment of the presentinvention;

FIG. 13 is a block diagram illustrating the configuration of a memorysystem according to an embodiment of the present invention; and

FIG. 14 is a block diagram illustrating the configuration of a computingsystem according to an embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, various embodiments of the present invention will bedescribed with reference to the accompanying drawings. In the drawings,a thickness and a distance of components may be exaggerated compared toan actual physical thickness and interval for convenience ofillustration. In the following description, detailed explanations ofknown related functions and constitutions may be omitted to avoidunnecessarily information obscuring the subject manner of the presentinvention. Like reference numerals refer to like elements throughout thespecification and drawings.

As illustrating in FIG. 1A, a semiconductor device may include asubstrate (not illustrated), stacked structures ST, and at least onefirst slit SL1. A cell region CELL and a contact region CONTACT may bedefined in the substrate. The stacked structures ST may includeconductive layers 11 and 13 and insulating layers 12 and 14 that areformed alternately with each other on the substrate. The first slit SL1may separate neighboring stacked structures ST from each other.

An end of the stacked structure ST may be patterned stepwise. Each stepof the stacked structure ST that is patterned stepwise may include atleast one conductive layer 11 or 13 and at least one insulating layer 12or 14. As illustrated in FIG. 1A, the insulating layer 12 or 14 may belocated on a top surface of each step. Alternatively, as illustrated inFIG. 1B, the conductive layer 11 or 13 may be located on the top surfaceof each step.

The stacked structure ST may include a pad structure PS located in thecontact region CONTACT and a cell structure CS located in the cellregion CELL. The pad structure PS and the cell structure CS may becoupled to each other. For example, the pad structure PS may be locatedat either or both sides of the cell structure CS.

The pad structure PS may include first conductive layers 11 and firstinsulating layers 12 that are alternately formed in the contact regionCONTACT of the substrate. An end of the pad structure PS may bepatterned stepwise. Portions of the first conductive layers 11 that areexposed along the stepped end of the pad structure PS may be defined aspad portions PAD. The pad portions PAD may have a greater thickness thanunexposed portions of the first conductive layer 11.

In addition, the pad structure PS may further include sacrificial layers15. The sacrificial layers 15 may be coupled to the first conductivelayers 11. For example, the first conductive layers 11 may be stacked onside walls along the z-axis of the pad structure PS exposed through thefirst slit SL1, i.e., in side regions thereof. The sacrificial layers 15may be stacked along the z-axis in a central region of the pad structurePS. The pad portions PAD may have a greater thickness than thesacrificial layers 15.

The cell structure CS may include second conductive layers 13 and secondinsulating layers 14 that are formed alternately with each other in thecell region CELL of the substrate. The first conductive layers 11 andthe second conductive layers 13 that are formed on the same level may becoupled to each other, and the first insulating layers 12 and the secondinsulating layers 14 that are formed on the same level may be coupled toeach other. For example, the first conductive layer 11 and the secondconductive layer 13 that are formed on the same level may be formed in asingle layer, and the first insulating layer 12 and the secondinsulating layer 14 that are formed on the same level may be formed in asingle layer.

The semiconductor device may further include channel layers CH thatpenetrate the cell structure CS and at least one second slit SL2 thatpenetrates the cell structure CS.

According to the above-described structure of the semiconductor device,the pad portion PAD may have a greater thickness than other unexposedportions of the first conductive layer 11. In addition, the pad portionPAD may have a greater thickness than the second conductive layer 13 andthe sacrificial layer 15. Therefore, the thickness of the pad portionPAD may be selectively increased without increasing the height of thestacked structure ST.

FIGS. 2A to 7A are perspective views, and FIGS. 2B to 7B arecross-sectional views taken along lines I-I′ of FIGS. 2A to 7A. Forillustration purposes, part of the stacked structure ST, especially thepad structure PS, is depicted.

As illustrated in FIGS. 2A and 2B, a plurality of first material layers21 and a plurality of second material layers 22 may be formedalternately with each other. The first material layers 21 may beprovided to form conductive layers, and the second material layers 22may be provided to form insulating layers.

The first material layers 21 may be formed of materials having a highetch selectivity with respect to the second material layers 22. Forexample, the first material layers 21 may include a conductive layersuch as a polysilicon layer, and the second material layers 22 mayinclude an insulating layer such as an oxide layer. In another example,the first material layers 21 may include a sacrificial layer such as anitride layer, and the second material layers 22 may include aninsulating layer such as an oxide layer.

In an embodiment of the present invention, a description will beprovided for an example in which the first material layer 21 includes asacrificial layer and the second material layer 22 includes aninsulating layer.

Subsequently, ends of an intermediate resultant structure including thefirst and second material layers 21 and 22 may be patterned stepwise.Each step of the intermediate resultant structure that is patternedstepwise may include a single first material layer 21 and a singlesecond material layer 22 formed on the first material layer 21.

Though not shown in FIGS. 2A and 2B, processes of forming memory cellsmay be performed before or after stepwise-patterning the first andsecond material layers 21 and 22. For example, a hole may be formedthrough the first and second material layers 21 and 22, and a memorylayer and the channel layer CH may be formed in the hole. The memorylayer may include at least one of a charge blocking layer, a datastorage layer, or a tunnel insulating layer. The data storage layer mayinclude a floating gate, such as a polysilicon layer, which can storecharge, a charge trap layer, such as a nitride layer, which can trapcharge, and nanodots. Before the memory layer is formed, a sacrificiallayer may be formed in the hole. In addition, the channel layer CH mayhave various shapes such as a straight shape, a U-shape and a W-shape.The channel layer CH may be formed in a tubular shape having an opencentral portion, in a pillar shape having a central portion completelyfilled, or a combination thereof. In another example, a gate insulatinglayer, the channel layer CH, and a phase-change material layer may besequentially formed in the hole. The phase-change material layer may beformed in a tubular shape having an open central region, in a pillarshape having a central portion completely filled, or a combinationthereof.

As illustrated in FIGS. 3A and 3B, impurities may be implanted into theintermediate resultant structure that is patterned stepwise, so thatimpurity regions 23 may be formed in the second material layers 22. Forexample, impurities such as N type impurities, P type impurities, argon(Ar), or helium (He) may be implanted by using an ion implantationprocess. In addition, process conditions may be controlled so that theprojected ion range (Rp) of the ion implantation process may be locatedin the second material layers 22.

During an impurity ion implantation process, a mask pattern may be used.For example, a mask pattern may be formed over the first and secondmaterial layers 21 and 22 so that the mask pattern may expose sideregions of the contact region CONTACT and cover a cell region and acentral region of the contact region CONTACT. Subsequently, an ionimplantation process may be performed using the mask pattern as abarrier.

As illustrated in FIGS. 4A and 4B, the first material layers 21 may beremoved to form recessed regions RC. For example, after an interlayerinsulating layer 24 is formed on the first and second material layers 21and 22, at least one first slit SL1 may be formed through the interlayerinsulating layer 24, the first material layers 21, and the secondmaterial layers 22. As a result, the stacked structures ST may beseparated from each other by the first slit SL1. Subsequently, the firstmaterial layers 21 exposed through the first slit SL1 may be removed bybeing etched from side walls of the stacked structure ST exposed throughthe first slit SL1. Therefore, the first material layers 21 may beremoved along the y-axis from side regions of each stacked structure ST,while the first material layers 21 in a central region thereof mayremain.

A second slit SL2 (see FIGS. 1A and 1B) located in the cell region CELLmay also be formed when the first slit SL1 is formed. If the second slitSL2 is formed in the cell region CELL, the first material layers 21exposed through the first and second slits SL1 and SL2 may be removed.Therefore, the first material layers 21 may be completely removed fromthe cell region CELL.

As illustrated in FIGS. 5A and 5B, the thickness of ends of the recessedregions RC may be increased. For example, the second material layers 22exposed by the recessed regions RC may be etched to a predeterminedthickness by using a wet etch process. Since an etch rate of theimpurity region 23 is higher than that of a region implanted with noimpurities, an etch amount of the impurity region 23 may be greater thanthat of a non-implanted region. Therefore, the ends of the recessedregions RC may be extended.

As described above, in an example where a sacrificial layer is formed ina hole, the sacrificial layer exposed through the recessed regions RCmay also be etched during an etch process performed to extend the endsof the recessed regions RC. In this example, a memory layer may beexposed along the recessed regions RC formed in the cell region CELL.

As illustrated in FIGS. 6A and 6B, memory layers, followed by conductivelayers 25, may be formed in the recessed regions RC. Each of the memorylayers may include at least one of a charge blocking layer, a datastorage layer, and a tunnel insulating layer.

As a result, the conductive layers 25 may be formed in which the padportions PAD exposed at the end of the stacked structure ST may have agreater thickness than unexposed portions of the conductive layers 25.

As illustrated in FIGS. 7A and 7B, contact holes may be formed throughthe interlayer insulating layer 24 so that the pad portions PAD may beexposed through contact holes, and conductive layers may be formed inthe contact holes. As a result, contact plugs 26 may be formed such thateach of the contact plugs 26 may be coupled to each of the pad portionsPAD.

The contact holes may be formed at different depths depending on heightsof the pad portions PAD. Conventionally, a punch phenomenon may occurdue to over-etching of upper pad portions PAD, or a not-open phenomenonmay occur in which lower pad portions PAD may not be exposed alongbottom surfaces of the contact holes. However, according to anembodiment of the present invention, since the thickness of the padportion PAD may be selectively increased to ensure an etch margin, theabove-described phenomena may be prevented.

Although a description has been made to an example in which the contactplugs 26 are arranged in a line, the contact plugs 26 may be arranged inother ways, such as in a staggered pattern.

Various changes may be made to the above-described manufacturingprocesses, depending on types of the first and second material layers 21and 22.

For example, the first material layers 21 may include conductive layers,and the second material layers 22 may include interlayer insulatinglayers. According to this example, after the first slit SL1 is formed,the second material layers 22 may be etched by using a wet etch process.Since the impurity region 23 is etched at a higher rate than a regionimplanted with no impurities, the second material layers 22 formed atthe upper parts of the pad portions PAD may be etched to form recessedregions. Subsequently, metal layers may be formed in the recessedregions and in the first slit SL1, and the first material layers 21 andthe metal layers may react with each other to thereby silicide the firstmaterial layers 21. Since the pad portion PAD of the first layer 21 maycontact and react with a greater portion of the metal layer through therecessed region, a silicide layer having a greater thickness than otherregions may be formed. Thus, processes of forming the recessed regionsRC by removing the first material layers 21 may be skipped.

Hereinafter, a description of the contents of additional processes inthe same manner as the above-described manufacturing processes isomitted.

As illustrated in FIG. 8A, before an impurity implantation process isperformed, a barrier layer 27 may be formed on the entire surface of theintermediate resultant structure that is patterned stepwise.Alternatively, as illustrated in FIG. 8B, before an impurityimplantation process is performed, side walls of the first materiallayers 21 exposed at respective steps may be oxidized to thereby form aplurality of barrier layers 28.

The barrier layers 27 and 28 may be formed in order to ensure an etchmargin when the ends of the recessed regions RC are extended.Particularly, the barrier layers 27 and 28 may be formed to ensure thedistance between stacked conductive layers (pad portions). As describedabove with reference to FIG. 5A, processes of increasing the thicknessof the ends of the recessed region RC may be performed to extend theends of the recessed regions RC in a Z direction and thereby increasethe thickness of the pad portions PAD. However, the recessed regions RCmay also be extended in the X direction during an etch process.Conventionally, the distance between the stacked conductive layers (padportions) may decrease, and therefore a breakdown voltage of theconductive layers 25 may be deteriorated. However, according to anembodiment of the present invention, since an etch margin is ensured bythe barrier layers 27 and 28, a sufficient distance may be ensuredbetween the stacked conductive layers (pad portions) to prevent anydeterioration.

When the barrier layers 27 and 28 are formed, the interlayer insulatinglayer 24 (not shown) may be formed over the barrier layers 27 and 28. Inaddition, each of the barrier layers 27 and 28 may be etched to apredetermined thickness during the etch process for extending the endsof the recessed regions RC, but other portions which are not etched mayremain. For example, the barrier layer 27 formed on the entire surfaceof the stacked structure ST or the barrier layer 28 formed on the sidewall of the pad portion PAD may remain.

FIGS. 9A to 11A are perspective views illustrating a method ofmanufacturing a semiconductor device according to another embodiment ofthe present invention, and FIGS. 9B to 11B are cross-sectional viewstaken along lines I-I′. For illustration purposes, part of the stackedstructure ST, especially part of the pad structure, is depicted.Hereinafter, a description of common contents with earlier describedembodiments is omitted.

As illustrated in FIGS. 9A and 9B, a plurality of first material layers31 and a plurality of second material layers 32 may be formedalternately with each other. A description will be made to an example inwhich the first material layer 31 includes a sacrificial layer, and thesecond material layer 32 includes an insulating layer.

Ends of an intermediate resultant structure including the first andsecond material layers 31 and 32 may be patterned stepwise. Each step ofthe intermediate resultant structure that is patterned stepwise mayinclude a single first material layer 31 and a single second materiallayer 32 formed under the first material layer 31.

Subsequently, a buffer layer 33 may be formed on an entire surface ofthe intermediate resultant structure that is patterned stepwise. Thebuffer layer 33 may include materials having a high etch selectivitywith respect to the first and second material layers 31 and 32. Forexample, the buffer layer 33 may include materials having a high etchselectivity with respect to the first material layers 31 and a higheretch rate than the second material layers 32.

In addition, the buffer layer 33 may be formed with a sufficientthickness since the buffer layer 33 may be etched to a predeterminedthickness during subsequent etch processes for extending the ends of therecessed regions RC.

As illustrated in FIGS. 10A and 10B, the first material layers 31 may beremoved to form the recessed regions RC. After an interlayer insulatinglayer 34 is formed over the first and second material layers 31 and 32,at least one first slit SL1 may be formed through the interlayerinsulating layer 34, the first material layers 31, and the secondmaterial layers 32, so that separate stacked structures ST may beformed. Subsequently, the first material layers 31 exposed through thefirst slit SL1 may be etched from side walls of the stacked structure STexposed through the first slit SL1 and thus removed. Therefore, thefirst material layers 31 may be removed from the side regions of eachstacked structure ST, while the first material layers 31 may remain inthe central region of the stacked structure ST.

As illustrated in FIGS. 11A and 11B, the thickness of the ends of therecessed regions RC may be increased. For example, the buffer layer 33through the recessed regions RC may be selectively etched. An etchprocess may be performed under the condition that the buffer layer 33 isetched at a higher rate than the second material layers 32. As a result,the ends of the recessed regions RC may be selectively extended.

Subsequently, conductive layers 35 may be formed in the recessed regionsRC. As a result, the pad portions PAD exposed at the end of the stackedstructure ST may have a greater thickness than other portions of theconductive layers 35.

Subsequently, contact holes may be formed through the interlayerinsulating layer 34 so that the pad portions PAD may be exposed throughthe contact holes, and conductive layers may be formed in the contactholes. As a result, each of the contact plugs 36 may be coupled to eachof the pad portions PAD.

FIGS. 12A to 12D are perspective views illustrating a cell structure ofa semiconductor device according to an embodiment of the presentinvention. However, for illustration purposes, an insulating layer isnot depicted.

FIG. 12A illustrates an example in which a channel layer is formed in aU-shape manner.

As illustrated in FIG. 12A, a semiconductor device may include a pipegate PG, word lines WL, at least one drain selection line DSL, and atleast one source selection line SSL that are stacked on a substrate SUB.

The semiconductor device may further include a plurality of U-shapedchannel layers CH. The channel layers CH may include a pipe channellayer P_CH that is formed in the pipe gate PG and source and drain sidechannel layers S_CH and D_CH that are connected to the pipe channellayer P_CH.

The source side channel layers S_CH may pass through the word lines WLand the source selection line SSL, and the drain side channel layersD_CH may pass through the word lines WL and the drain selection lineDSL. In addition, the source side channel layers S_CH may be coupled toa source line SL, and the drain side channel layers D_CH may be coupledto bit lines BL.

The semiconductor device may further include memory layers M that areinterposed between the channel layers CH and the word lines WL.

According to the above-described structure of the semiconductor device,a source selection transistor may be formed at an interconnectionbetween the source side channel layer S_CH and the source selection lineSSL. A source side memory cell may be formed at an interconnectionbetween the source side channel layer S_CH and the word line WL. A pipetransistor may be formed at an interconnection between the pipe channellayer P_CH and the pipe gate PG. A drain selection transistor may beformed at an interconnection between the drain side channel layer D_CHand the drain selection line DSL. A drain side memory cell may be formedat an interconnection between the drain side channel layer D_CH and theword line WL. Therefore, at least one source selection transistor, aplurality of source side memory cells, a pipe transistor, a plurality ofdrain side memory cells, and at least one drain selection transistorthat are coupled in series with each other may form a single string.Strings may be arranged in a U-shaped manner.

FIG. 12B illustrates an example in which a channel layer is formed in avertical shape manner.

As illustrated in FIG. 12B, the semiconductor device may include atleast one lower selection line LSL, the word lines WL, and at least oneupper selection line USL that are subsequently stacked on the substrateSUB where a source region S is formed. The word lines WL may be formedin the shape of a plate, and at least any one of the upper or lowerselection lines USL and LSL may have a linear shape.

The semiconductor device may further include the channel layers CH. Thechannel layers CH may protrude from the substrate SUB and pass throughthe lower selection line LSL, the word lines WL, and the upper selectionlines USL. Top portions of the channel layers CH may be coupled to thebit lines BL, and bottom portions of the channel layers CH may becoupled to the source region S.

The semiconductor device may further include the memory layers M thatare interposed between the channel layers CH and the word lines WL.

According to the above-described structure of the semiconductor device,a lower selection transistor may be formed at an intersection betweenthe channel layer CH and the lower selection line LSL. A memory cell maybe formed at an intersection between the channel layer CH and the wordline WL. An upper selection transistor may be formed at an intersectionbetween the channel layer CH and the upper selection line USL.Therefore, at least one lower selection transistor, a plurality ofmemory cells, and at least one upper selection transistor that arecoupled in series with each other may form a single string. Strings maybe arranged in a vertical manner.

FIG. 12C illustrates an example in which strings are arranged in avertical manner.

As illustrated in FIG. 12C, the semiconductor device may include sourcelayers S1 to S3, at least one lower selection line LSL, word lines WL,and at least one upper selection line USL that are sequentially stacked.

The source layers S1 to S3 may include a first source layer S1, a secondsource layer S2, and a third source layer S3. The first source layer S1may be formed on the substrate SUB. The third source layer S3 may beformed in the first source layer S1. The second source layer S2 maysurround the third source layer S3 and be interposed between the firstsource layer S1 and the third source layer S3. In addition, the thirdsource layer S3 may be formed through the second source layer S2 andcoupled to the first source layer S1. Each of the first and secondsource layers S1 and S2 may include a polysilicon layer, and the thirdsource layer S3 may include a metal layer such as a tungsten (W) layer.

The semiconductor device may further include the channel layers CH. Thechannel layers CH may protrude from a top surface of the second sourcelayer S2 and be formed through the lower selection line LSL, the wordlines WL, and the upper selection lines USL. The channel layers CH maybe connected to the second source layer S2 in a single-body structure.In addition, top portions of the channel layers CH may be coupled to thebit lines BL.

The semiconductor device may further include the memory layers M thatare interposed between the channel layers CH and the word lines WL. Thememory layer M may surround outer surfaces of the channel layers CH andthe second source layer S2.

According to the structure of the above structure, at least one lowerselection transistor, memory cells, and at least one upper selectiontransistor that are coupled in series with each other may form a singlestring. Strings may be arranged in a vertical manner.

FIG. 12D illustrates an example in which a channel layer has a verticalshape.

As illustrated in FIG. 12D, the semiconductor device may include aninterlayer insulating layer IIL, at least one lower selection line LSL,word lines WL, and at least one upper selection line USL that aresequentially stacked. The semiconductor device may further include thefirst source layer S1 and the second source layer S2. The first sourcelayer S1 may be formed in the interlayer insulating layer IIL, and thesecond source layer S2 may be formed in the first source layer S1.

The semiconductor device may further include the channel layers CH thatprotrude from the first source layer S1 and pass through the lowerselection line LSL, the word lines WL, and the upper selection linesUSL. The channel layers CH may be connected to the first source layer S1in a single-body structure. In addition, top portions of the channellayers CH may be coupled to the bit lines BL.

The semiconductor device may further include the memory layers M thatare interposed between the channel layers CH and the word lines WL. Thememory layers M may surround outer surfaces of the channel layers CH andthe first source layer S1.

FIG. 12D illustrates the first source layer S1 that completely surroundsa bottom surface of the second source layer S2. However, part of thebottom surface of the second source layer S2 may protrude and passthrough the first source layer S1.

According to the above-described structure of the semiconductor device,at least one lower selection transistor, a plurality of memory cells,and at least one upper selection transistor that are coupled in serieswith each other may form a single string. Strings may be arranged in avertical manner.

The semiconductor devices described with reference to FIGS. 12A to 12Dmay be manufactured by applying the above-described manufacturingmethods. A detailed description of the manufacturing methods is omitted.

As illustrated in FIG. 13, a memory system 100 according to anembodiment of the present invention may include a non-volatile memorydevice 120 and a memory controller 110.

The non-volatile memory device 120 may have any of the above-describedstructures. In addition, the non-volatile memory device 120 may be amulti-chip package composed of a plurality of flash memory chips.

The memory controller 110 may be configured to control the non-volatilememory device 120. The memory controller 110 may include SRAM 111, a CPU112, a host interface 113, an ECC 114, and a memory interface 115. TheSRAM 111 may function as an operation memory of the CPU 112. The CPU 112may perform the general control operation for data exchange of thememory controller 110. The host interface 113 may include a dataexchange protocol of a host being coupled to the memory system 100. Inaddition, the ECC 114 may detect and correct errors included in a dataread from the non-volatile memory device 120. The memory interface 115may interface with the non-volatile memory device 120. The memorycontroller 110 may further include ROM that stores code data tointerface with the host.

The memory system 100 having the above-described configuration may be asolid state disk (SSD) or a memory card in which the memory device 120and the memory controller 110 are combined. For example, when the memorysystem 100 is an SSD, the memory controller 110 may communicate with anexternal device (e.g., a host) through one of the interface protocolsincluding USB, MMC, PCI-E, SATA, PATA, SCSI, ESDI, and IDE.

As illustrated in FIG. 14, a computing system 200 according to anembodiment of the present invention may include a CPU 220, RAM 230, auser interface 240, a modem 250, and a memory system 210 that areelectrically coupled to a system bus 260. In addition, when thecomputing system 200 is a mobile device, a battery may be furtherincluded to apply an operating voltage to the computing system 200. Thecomputing system 200 may further include application chipsets, a CMOSImage Sensor (CIS), and mobile DRAM.

As described above with reference to FIG. 13, the memory system 210 mayinclude a non-volatile memory device 212 and a memory controller 211.

By selectively increasing the thickness of pad portions of conductivelayers, an etch margin may be ensured during a contact hole formingprocess for forming a contact plug. Therefore, a punch phenomenon and anot-open phenomenon may be prevented during the contact hole formingprocess.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: forming a stacked structure including a pluralityof first material layers and a plurality of second material layersformed alternately with each other, wherein an end of the stackedstructure is patterned stepwise; forming a plurality of recessed regionsby removing the plurality of first material layers; increasingthicknesses of ends of the plurality of recessed regions; and forming aplurality of conductive layers in the plurality of recessed regions inwhich the ends are extended.
 2. The method of claim 1, furthercomprising forming impurity regions in the plurality of second materiallayers by implanting impurities into the stacked structure having astepped end.
 3. The method of claim 2, wherein the forming of theimpurity regions is performed by using an ion implantation process, anda projected ion range (Rp) of the ion implantation process is located inthe plurality of second material layers.
 4. The method of claim 2,wherein the increasing of the thicknesses of the ends of the pluralityof recessed regions comprises etching the impurity regions exposedthrough the plurality of recessed regions.
 5. The method of claim 2,further comprising forming a barrier layer on an entire surface of thestacked structure before the forming of the impurity regions.
 6. Themethod of claim 2, further comprising forming a plurality of barrierlayers by oxidizing the first material layers exposed at the end of thestacked structure by a predetermined thickness before the forming of theimpurity regions.
 7. The method of claim 1, further comprising forming abuffer layer on the stacked structure before the forming of theplurality of recessed regions.
 8. The method of claim 7, wherein theincreasing of the thicknesses of the ends of the plurality of recessedregions comprises etching the buffer layer exposed at the ends of theplurality of recessed regions by a predetermined thickness.